Realization of dual-gated Ge–SixGe1−x core-shell nanowire field effect transistors with highly doped source and drain

Abstract

We demonstrate dual-gated germanium (Ge)-silicon germanium (SixGe1−x) core-shell nanowire (NW) field effect transistors (FETs) with highly doped source (S) and drain (D). A high-κ HfO2 gate oxide was deposited on the NW by atomic layer deposition, followed by TaN gate metal deposition. The S and D regions of NW were then doped using low energy (3 keV) boron (B) ion implantation with a dose of 1015 cm−2. The electrical characteristics of these devices exhibit up to two orders of magnitude higher current and an improved ON/OFF current ratio by comparison to dual-gated NW FET with undoped S/D.