Abstract
We present AC modeling of WG-FET devices based on gate probe distance. Small- and large-signal models are proposed. It is shown that unity gain frequency is inversely proportional to gate distance. Also, common source amplifier, inverter, and ring oscillator circuits are fabricated with WG-FET devices, which use 16 nm-thick mono-Si film as channel layer, for the first time. Circuit simulations are performed based on AC models. Results are verified with experimental measurements using de-ionized (DI) water. For common source amplifier, fUG is measured as 21 Hz for 2 mm gate distance, and it is increased to 1.2 kHz when gate distance is decreased to 200 μm. For inverter, rail-to-rail operation is observed with tPLH of 24 ms and tPHL of 58 ms for 1 square-wave input signal at 1 Hz. Gain is measured as −11 V/V at switching threshold. Ring oscillator is realized with five inverters. A square-wave output signal with amplitude of 840 and frequency of 2.6 Hz is obtained. AC modeling of WG-FET enables realization of advanced circuits which are inherently compatible with fluidic systems. Therefore, they can be valuable assets especially in microfluidic applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
