Improved Repeatability in Planar Water-gated Field Effect Transistor (WG-FET) with 16-nm-thick Single Crystalline Si Film

Abstract

Repeatable operation of a water-gated field effect transistor (WG-FET) with 16-nm-thick single crystalline silicon (Si) film is reported for the first time. For devices with fluidic interface, repeatability is highly important, especially when they are used for microfluidic applications such as biomedical sensors or lab-on-a-chip implementations. Previous devices have shown almost an order of magnitude decrease in electrical current levels after the first operation. In this work, stable results are obtained for at least ten days after the first operation by insulating silicon oxide (SiO2) region surrounding the active area.