Reactive pulsed magnetron sputtering process for alumina films

Abstract

The pulsed magnetron sputtering (PMS) process is now among the leading techniques for the deposition of oxide films. In particular, the use of pulsed dc power has transformed the deposition of dielectric materials, such as alumina. The periodic target voltage reversals during the PMS process effectively discharge poisoned regions on the target. This significantly reduces the occurrence of arc events at the target and stabilizes the deposition process. Many researchers have now shown that pulsed dc reactive magnetron sputtering can be routinely used to produce fully dense, defect-free oxide films. Despite the success of the PMS process, few detailed studies have been carried out on the role played by parameters such as pulse frequency, duty cycle, and reverse voltage in the deposition process. In this study, therefore, alumina films were deposited by reactive pulsed dc magnetron sputtering. Operating conditions were systematically varied and the deposition process monitored throughout. The aim was to investigate the influence of the pulse parameters on the deposition process, and the interrelationships between the occurrence of arc events and the parameters chosen. As a result of this investigation, optimum conditions for the production of high-quality alumina films under hard arc-free conditions were also identified.