Reactive pulsed laser deposition of gold nitride thin films

Abstract

We report on the growth and characterization of gold nitride thin films on Si 〈1 0 0〉 substrates at room temperature by reactive pulsed laser ablation. A pure (99.95%) Au target was ablated with KrF excimer laser pulses in nitrogen containing atmosphere (N 2 or NH 3). The gas ambient pressure was varied in the range 0.1–100 Pa. The morphology of the films was studied by using optical, scanning electron and atomic force microscopy, evidencing compact films with RMS roughness in the range 3.6–35.1 nm, depending on the deposition pressure. Rutherford backscattering spectrometry and energy dispersion spectroscopy (EDS) were used to detect the nitrogen concentration into the films. The EDS nitrogen peak does not decrease in intensity after 2 h annealing at 250 °C. Film resistivity was measured using a four-point probe and resulted in the (4–20) × 10 −8 Ω m range, depending on the ambient pressure, to be compared with the value 2.6 × 10 −8 Ω m of a pure gold film. Indentation and scratch measurements gave microhardness values of 2–3 GPa and the Young's modulus close to 100 GPa. X-ray photoemission spectra clearly showed the N 1s peak around 400 eV and displaced with respect to N 2 phase. All these measurements point to the formation of the gold nitride phase.