Deposition of carbon nitride films by reactive pulsed-laser ablation at high fluences

Abstract

The effects of high laser fluence on the properties of CNx thin films prepared by reactive pulsed laser (KrF excimer laser, λ=248 nm, τFWHM=30 ns) ablation at two different N2 gas pressures were investigated. A variety of analytical techniques have been used to characterize the structure and properties of the deposited films: X-ray photoelectron spectroscopy; X-ray diffraction; scanning electron microscopy; energy dispersive X-ray spectroscopy; Fourier transform infrared; and Rutherford backscattering spectroscopy. Analysis of these data shows the existence of a certain amount of covalent C–N single bonds and a nitrogen content up to 44%. The results also show the presence of covalent C≡N triple bonds in the film deposited at high nitrogen pressure (50 Pa). Comparison with the films deposited by XeCl excimer laser (λ=308 nm, τFWHM=30 ns), at the same experimental conditions, will also be presented.