Abstract
Reflection masks for use in X-ray projection lithography can be obtained by etching synthetic multilayer interference mirrors. Reactive ion etching of such mirrors was investigated with respect to the etch rate and etch profile. Patterned Mo/C, W/C, Mo/Si, and W/Si multilayer mirrors were reactive ion etched in a fluorinated (SF6/CHF3) gas mixture. Ni/C and Cr/C multilayer mirrors could be etched in a chlorinated gas (Cl2/Ar). The etching speed varied from 0.02 nm/s to 3 nm/s depending on the material and the process parameters. The groove depth could be controlled within one layer by following the reflectivity of the multilayer mirror with an helium-neon laser during the transfer process. Multilayer mirror features in the 0.1 μm range could be produced.
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