Abstract
Mo/Si multilayer mirrors (30 periods, doublelayer thickness 7 nm) with the AZ-PF514 resist pattern whose smallest lines and spaces structure was 0.5 μm were etched by reactive ion etching (RIE) in a fluorinated plasma. The etch rate, selectivity and etch profile were investigated as a function of the gas mixture, pressure, and plasma rf power. The groove depth and the etch profile were investigated by an atomic force microscope before RIE, after RIE and after resist removal.
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