Abstract
The reactive ion etching (RIE) of commercial PMMA sheet has been examined in pure 02 and CHF3/02 plasma. The aim of this study was to optimize the etching PMMA process parameter. Addition of CHF3 , which have a surface passivation effect, to Oxygen plasmas should be obtained vertical edges at an acceptable etch rate. A RIE parallel plate reactor was used and electroplated nickel film was used as mask. We discuss the influence of pure 02 and O2/CHF3 etching gas on etching profile, the influence of the etching parameters such as gas pressure and CHF3/O2 ratio on vertical etching rate, lateral etching rate and etching profile was also investigated.
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