Abstract
We report the observation of the Rashba-Edelstein magnetoresistance (REMR) at room temperature in two two-dimensional (2D) materials, single layer graphene (SLG) and 2D semiconductor $\mathrm{Mo}{\mathrm{S}}_{2}$. The measurements were performed in heterostructures with yttrium iron garnet (YIG), namely, YIG/SLG and ${\text{YIG/MoS}}_{2}$, by means of the modulated magnetoresistance technique. We show that the action of the direct and inverse Rashba-Edelstein effects (REEs) in a YIG/2DM structure couples current-induced spin accumulation to the electric resistance, producing the REMR. The resistance change is similar to the one observed in spin Hall magnetoresistance experiments, but the origin of the change here lies in the 2D Rashba-Edelstein effects and not in the 3D spin Hall effects. The measured REE lengths for the two materials are in good agreement with the values obtained with the electric spin pumping technique.
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