Abstract
The proximity effect opens ways to transfer properties from one material into another and is especially important in two-dimensional (2D) materials. In van der Waals heterostructures, transition metal dichalcogenides (TMDs) can be used to enhance the spin–orbit coupling of graphene leading to the prediction of gate controllable spin-to-charge conversion (SCC). Here, we report for the first time and quantify the spin Hall effect (SHE) in graphene proximitized with WSe2 up to room temperature. Unlike in other graphene/TMD devices, the sole SCC mechanism is the SHE and no Rashba–Edelstein effect is observed. Importantly, we are able to control the SCC by applying a gate voltage. The SCC shows a high efficiency, measured with an unprecedented SCC length larger than 20 nm. These results show the capability of 2D materials to advance toward the implementation of novel spin-based devices and future applications.
Highlights
T scitation.org/journal/apm gate voltage,23,52 which in the case of WSe2 could lead to larger spin Hall angles in the electron-doped regime of graphene31 and in general would lead toward an electrically controllable spin-to-charge conversion (SCC) device
In van der Waals heterostructures, transition metal dichalcogenides (TMDs) can be used to enhance the spin–orbit coupling of graphene leading to the prediction of gate controllable spin-to-charge conversion (SCC)
While the previous measurements claiming the spin Hall effect (SHE) in graphene used a non-local Hall bar geometry,44–46 where a variety of nonspin-related effects can contribute and make an interpretation difficult,47–51 the SHE was first unambiguously reported in graphene/MoS239 and the REE later in graphene/WS2.43 Theoretical calculations show that the proximity spin–orbit coupling (SOC) can be tuned by a scitation.org/journal/apm gate voltage,23,52 which in the case of WSe2 could lead to larger spin Hall angles in the electron-doped regime of graphene31 and in general would lead toward an electrically controllable spin-to-charge conversion (SCC) device
Summary
T scitation.org/journal/apm gate voltage,23,52 which in the case of WSe2 could lead to larger spin Hall angles in the electron-doped regime of graphene31 and in general would lead toward an electrically controllable spin-to-charge conversion (SCC) device.
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