Rapid Thermal Annealing Induced Deep Level Defects in Te-Doped GaAs

Abstract

Rapid thermal annealing (RTA) induced defect transformations in tellurium-doped GaAs (GaAs:Te) have been investigated using deep level transient spectroscopy (DLTS) studies. The unusual aspect of Te-doping in GaAs on the passivation of native defects such as EL6, EL3 and EL2 levels is discussed with reference to the undoped and Si-doped GaAs. The origin of a defect with Poole-Frenkel emission behaviour, whose activation energy displays a strong electric field dependence, in one of the rapid thermal annealed samples is also discussed. Its zero electric field activation energy is speculated as (0.58 ± 0.02) eV.