Abstract
We have carried out deep-level transient spectroscopy (DLTS) studies of several samples of n-InP implanted with different doses of 2 MeV 16O + ions to investigate the behavior of deep levels in the near-surface regions of the samples. Results of samples implanted at room temperature show drastic change in the defect structure, with the disappearance of peaks originally present in unimplanted control samples. DLTS studies have also been conducted on hot-implanted n-InP and also on those that have been subjected to rapid thermal annealing (RTA) at 750°C. DLTS results from RTA samples show that there is a certain degree of lattice recovery as shown by the return of electron trapping levels. Rutherford backscattering (RBS) channeling data on RTA samples also show limited lattice recovery in the surface region.
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