Abstract
The depth profile of 13C +, 15N + and 27Al + implanted into (111) Si and Ge and also 24Mg + implanted into Ge have been determined by the (p, γ) resonance broadening method. The depth profiles have been measured for implants over the energy range 20–100 keV with peak atom concentrations of 1−5 at.%. For implantations impinging at 0°–20° to the surface, no clear evidence of channeling was seen. The experimental mean ranges are in agreement with theoretical Monte Carlo calculations with a universal potential calculated using Dirac-Fock electron distributions. The experimental ranges are also compared with ranges calculated using the assumptions of the LSS theory.
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