Abstract
We report depth distributions of 200-keV He ions channeled in the 〈100〉 and 〈110〉 directions of Si, Ge, and GaAs crystals and in a random orientation of each crystal, measured using secondary ion mass spectrometry. The 〈100〉 channeled profiles agree with the random profiles within experimental error. The 〈110〉 channeled profiles are about 1.7, 2.3, and 2.2 times as deep as the random peaks (projected range) for the three crystals, respectively. Assuming velocity-proportional electronic stopping, values of electronic stopping are calculated for He in Si, Ge, and GaAs. Fractions of He ions backscattered into the vacuum are estimated. Profiles for Ge and GaAs, with the same average atomic number, are compared. Range and profile shape parameters are tabulated.
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