Redistribution of Implanted Hydrogen in p+ GaAs(Zn) and n+ GaAs(Si) Crystais

Abstract

ABSTRACTIn order to gain a better understanding of hydrogen in GaAs crystals, a Zn doped p+ GaAs wafer has been implanted with 300 keV protons (H) to a fluence of 1E16/ain and portions of the wafer have been furnace annealed at temperatures up to 600°C. The implanted H and the dopant Zn atomr were then depth profiled using secondary ion mass spectrometry (SIMS). The measurements show that the H redistributes itself in the p+ GaAs(Zn) in much the same manner as it does in n+ GaAs(Si). Movement of the implanted H begins with annealing at 200°C and proceeds rapidly with higher temperatures. However, based on the SIMS profiles, the diffusion coefficient for the H diffusing into the undamaged p+ GaAs(Zn) crystal appears to be considerably higher than that of H into n+ GaAs(Si). Electronic properties of the inplanted and annealed p+ GaAs samples have also been examined and correlated with the SINE profiles.