Abstract
A study by means of analytical modeling and simulation analysis on random dopant induced double gate MOSFET threshold voltage fluctuations is presented. Analytical models describing the standard deviation of threshold voltage distribution associated with dopant fluctuation are derived. The effects of various double gate MOSFET design parameters, including the doping concentration, oxide thickness, silicon thickness on the threshold voltage fluctuations arc studied. The analytical models predict the general trends in threshold voltage fluctuations. The effect of dopant position fluctuation is also studied. Analytical models and simulations show that double gate MOSFET can suppress the impact of random dopant fluctuation on threshold voltage variations compared with single gate MOSFET.
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