Abstract
A variety of Magnetic Random Access Memory (MRAM) have been explored and developed in the last several decades. All these MRAMs use the magnetization of the specific magnetic material to store the information. Due to many outstanding advantages such as high speed, high density, low power, unlimited write and read endurance and non-volatility, MRAM is studied intensively and is considered as one of the most promising candidates of the next generation of Random Access Memory (RAM). In this article, several novel magnetic memories, including Toggle filed induced magnetic MRAM (Toggle-MRAM), Spin Transfer Torque MRAM (STT-MRAM), Voltage-Controlled MRAM (VC-MRAM), Spin Orbit Torque MRAM (SOT-MRAM), and Racetrack memory will be introduced in terms of their operating principals, structures, performance, application prospect, etc.
Published Version
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