Abstract
AbstractWe have carried out a detailed investigation of temperature‐dependent micro‐Raman scattering on In1 − xGaxN films with different Ga compositions (0.06 ≤ χ ≤ 0.91). The observed phonon frequency downshift and linewidth broadening with increasing temperature of A1(LO) and E2(high) modes can be well explained by a model taking into account the contributions of the thermal expansion, the lattice‐mismatch‐induced strain, and the anharmonic phonon processes. We have elucidated the variation with Ga composition of the contribution of the three‐ and four‐phonon processes in the anharmonic effect. It is found that with increasing Ga composition the three‐phonon process increases over the four‐phonon process. The variation in the relative contribution from three‐ and four‐processes can be further attributed to the diversification of structural properties and phonon density of states in InGaN.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
