Abstract
Strain-free Raman frequencies of the E2 high and A1(LO) modes of hexagonal InN are determined to be 490.1±0.2 and 585.4±0.4cm−1 by Raman measurements on a freestanding InN film grown by molecular beam epitaxy. The strain-free Raman frequencies are further confirmed by linear fits to Raman frequencies of the E2 and A1(LO) modes of InN epilayers under different biaxial strains. Raman linear biaxial stress coefficients for the E2 and A1(LO) modes of InN are obtained with values of 9.0±0.8 and 8.4±0.8cm−1∕GPa. The phonon deformation potentials are also obtained by using sets of available stiffness constants of hexagonal InN.
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