Abstract
Theoretical and experimental studies of the Raman spectra of delta-doped bulk GaAs and GaAs–AlxGa1−xAs multiple quantum wells are presented. Intersubband plasmon modes are calculated with an energy-dependent effective-mass theory, which takes into account the band nonparabolicity. The screened external potential due to impurity and electron charge distribution including the exchange and correlation effects are calculated self consistently within the local density approximation. The calculated Raman spectra are in agreement with experimental data with a reasonable assumption of doping profile.
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