Abstract
A combined characterization of theoretical calculation and experimental measurements, including Raman scattering, photoluminescence and cross sectional transmission electron microscopy, has been made on GaAs-AlxGai1−xAs multiple quantum wells (MQW) structures with different well widths grown by metalorganic chemical vapor epitaxy (MOCVD) with a modified reactor. Various parameters of these MQWs are obtained. The results with and without the alkyl push flow are compared. Related physical phenomena are discussed.
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