Abstract
The relation between the exciton linewidth and the quantum well width is studied for various In compositions in InGaAs/GaAs quantum wells. A region of minimum exciton linewidth is observed. Thick multiple quantum wells, grown in this minimum linewidth region, show sharp excitonic features when grown under RHEED determined optimized growth conditions. Ultrathick strained multiple quantum wells with good optical quality are realized by exploiting strain relief via growth on pre-patterned substrates.
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