Abstract
Time-resolved Raman scattering has been employed to investigate phonon-phonon interactions in GaAs-AlxGal_xAs multiple quantum well structures. By separately monitoring the growth as well as decay of the non-equilibrium LO phonons created by the relaxing carriers inside each type of layers, information about the hot carrier dynamics such as the population relaxation time of the LO phonons has been obtained. Our experimental results have shown that (1) phonon zone-folding plays little role in the determination of the population relaxation time of GaAs, GaAs-like and AlAs-like LO phonons; (2) hot-phonon effect should also be important in the AlxGal_xAs layers of GaAs-AlxGai_xAs multiple quantum well structures; (3) the average population relaxation time of the LO phonons which are active in hot-phonon effect in GaAs quantum wells is determined to be 8±1ps at T=10K.
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