Abstract
The first experimental results of the temperature dependent radiative properties of separation by implantation of oxygen (SIMOX) wafers, in the literature, have been reported in this study. These measurements have been performed in the temperature range of 17 to 800/spl deg/C and wavelength range of 0.8 to 20 /spl mu/m using a spectral emissometer. A modeling approach based on Multi-Rad, a matrix method of representing multi-layers, has been adopted to interpret the experimental data. Operating ranges of wavelength for pyrometry have been suggested for a reliable monitoring of temperature for processing SIMOX wafers.
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Schedule a callMore From: IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A
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