Abstract
SIMOX (separation by implantation of oxygen) is one of leading methods to synthesize SOI (silicon on insulator) wafers. Low-dose implantation is a growing interest method nowadays for the fabrication of SIMOX wafers since it shows great advantages such as high yield, high thermal conductivity and stronger radiation hardening compared to conventional standard full dose implantation. In this paper, we reported the formation of SIMOX-SOI at acceleration energies ranging from 160 to 100 KeV with doses of 4.5 and 5.5/spl times/10/sup 17/ cm/sup -2/, and consequently annealed at high temperature of 1324/spl deg/C in Argon+Oxygen atmosphere for 5 hours. The evolution of low-dose SIMOX wafers was characterized by RBS, XTEM, HRTEM and Secco, respectively. The results indicate that the optimum dose-energy window plays an important role for the formation of high quality SIMOX wafers with good crystals of top silicon, sharp Si/SiO/sub 2/ interface, high integrated buried oxide layer with minimum silicon island density.
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