Abstract
Abstract Measurements have first been made of the absolute cross sections for the radiation of 1.2 GeV electrons moving near the ⟨110⟩ crystallographic axis of diamond and silicon single crystals. 17- and 25-fold excesses of the electron radiation intensity over the bremsstrahlung intensity have been established for silicon and diamond crystals, respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
