Abstract
Abstract Radiation defect formation in Czochralski-grown (pulled) and vacuum float-zone n-Si (ρ=15 to 150 ωcm) irradiated by electrons with energy Ee=2.5 to 1200 MeV has been studied. The results have been obtained from an analysis of the dose, energy and temperature dependences of the concentration n, Hall mobility μ n , and charge-carrier lifetime τ. The experimentally observed peculiarities in the variation of n, μ n , and τ irradiation by electrons with E10 MeV have been explained taking into account the formation of radiation defect clusters in the bulk of the crystal induced by such electrons. The correlation coefficients Ki have bsen obtained which take into consideration the “evolution” of primary displacement cascades in the location of which clusters are formed. The parameters of radiation defect clusters produced by electrons of different energies have been calculated using these coefficients.
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