Clusters of radiation defects in silicon with dislocations

Abstract

An influence of dislocations (ND = 1 × 104 to 1 × 107 cm−2) on the radiation defect cluster formation by 640 MeV proton irradiation is investigated in n-type silicon (Q ≈ 100 ωcm). The temperature dependences of Hall coefficient and conductivity obtained in the temperature interval of 80 to 400 K demonstrate that the production rate and thermal ionization energy of divacancies as well as the potential barrier for their aggregation are independent on the dislocation density ND. In the case of A-centres these parameters appear to vary with ND. The results obtained are described on the basis of the fact that dislocations have strain fields. These fields affect the formation of complexes of primary defect–impurity atom-type which are accumulated near the dislocations and create the impurity–defect atmosphere. The strain fields do not alter the processes of intrinsic defect cluster formation which occur in the region of the primary displacement cascade. [Russian Text Ignored].