Abstract
This work presents an overview of the most important mechanisms of radiation damage in silicon detectors to be used for high energy experiments in LHC. The changes in the shallow concentration have been studied by thermally stimulated currents (TSC) after proton and neutron irradiation with fluences up to 10/sup 15/ cm/sup -2/ to investigate the role of thermal donors and the donor-removal effect in standard and oxygen enriched silicon with different resistivities. Deep defects in irradiated silicon have been analysed by deep level transient spectroscopy (DLTS) and photo induced current transient spectroscopy (PICTS) in the same materials. The radiation-induced microscopic disorder has been related with the carrier transport properties of irradiated silicon measured by the Hall effect, by capacitance and current vs. voltage characteristics and with charge collection efficiency. The dependence of the irradiated silicon detectors performances on crystal orientation, on incident particle type and on the initial concentration of oxygen and carbon is also discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
