Radiation and cryogenic test results with a monolithic GaAs preamplifier in C-HFET technology

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We report test results with a monolithic GaAs preamplifier fabricated in industrial C-HFET technology irradiated with a total dose of 10 14 neutrons/cm 2 and 100 Mrad γ radiation and operated under cryogenic conditions. The measured gate current of the input transistor of a few nA increases by < 10% after irradiation. For a 330 μm input FET width, the equivalent noise charge (ENC) is typically 145 electrons per pF total input capacitance at a shaping time of 25 ns (bipolar) before irradiation and changes approximately by 10% after irradiation. Under cryogenic operation the corresponding input referred noise decreases by roughly a factor of two.