Abstract
In this paper experimental results of the radial dopant segregation in Ge:Ga single crystals grown by the vertical gradient freeze technique with a rotating magnetic field are presented. The segregation is analysed on the basis of the carrier concentration measured by means of Hall effect and Fourier transform infrared (FTIR) spectroscopy. In growth without the field the carrier concentration increases towards the axis, whereas much more uniform radial concentration profiles are found in crystals grown under the influence of the rotating field indicating a pronounced impact of the melt flow on the dopant segregation. Apparently, the accumulation of the Ga solute near the centre of the melt during growth under natural buoyancy is reduced by the electromagnetically induced flow. This phenomenon is discussed with respect to analytical and numerical results published recently.
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