Abstract
InP and GaAs crystals with a diameter of 2″ were grown by the vertical gradient freeze (VGF) technique. It is demonstrated by electrical and optical investigations that the VGF technique allows the growth of crystals with a uniform distribution of the dopants in both a macroscopic and a microscopic scale. The etch pit density in the VGF grown crystals is reduced compared to LEC-grown ones. Numerical modelling was used to optimize thermal boundary conditions.
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