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Abstract
Defect profiles near the denuded zone in intrinsic-gettering (IG)-treated Czochralski (CZ) Si wafers, which had been immersed in Secco etching solution in advance, were measured using a wafer defect analyzer. It is clear that measurement of oxygen precipitates is completed near the denuded zone of 125-mm-diam Si wafers in a few hours, and that in the region of precipitate densities from 5×104 to 106 (cm-2) that were counted by means of Nomarski microscope, the systematical error of this wafer defect analyzer is smaller than 10%.
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