Abstract
A survey of crystal defects in Czochralski (CZ) Si and liquid encapsulated Czochralski (LEC) semi-insulating (SI) GaAs is given and basic concepts governing behaviour and interactions between point-like and extended defects are reviewed. The concepts, namely oxygen precipitate nucleation and precipitate-dislocation complex (PDC) formation in Si, cellular structure, non-stoichiometry, and slip dislocation formation in GaAs, are used to interpret our recent results on characterization of CZ Si and SI GaAs wafers.
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