Abstract
A buried p-layer in a GaAs MESFET channel is successfully formed by (Si, Mg) co-implantation and rapid thermal annealing process. The effects of co-implantation dose on the measured electrical activity are investigated; and the results on MESFET implantation profiles are also discussed, when Si and Mg are co-implanted in the semi-insulating (SI) GaAs substrates. These modified profiles are calculated by considering electrical activation and diffusion of both Si and Mg in the SI GaAs. The results are compared with an n-layer measured by the C– V and I– V techniques.
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