Quasiequilibrium crystal shape and kinetic Wulff plot for GaN grown by trihalide vapor phase epitaxy using GaCl3

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We demonstrated the selective‐area growth (SAG) of the nonpolar m‐plane and the polar −c‐plane substrates to determine the quasiequilibrium crystal shape (quasi‐ECS) by trihalide vapor phase epitaxy (THVPE). The results were compared with those by hydride vapor phase epitaxy (HVPE). The polar N‐face and the nonpolar m‐planes were consistently stable with the semipolar planes emerging only at high temperature for the quasi‐ECS grown by THVPE. The clear facets of the polar Ga‐face (0001) and Ga‐face sense semipolar planes such as did not appear. The kinetic Wulff plots for THVPE were constructed using the growth velocities for each emerging facet of the SAG.Bird's‐eye view SEM images of the selective‐area GaN crystals grown on the m‐plane and –c‐plane for THVPE.