Abstract
Homoepitaxial tri-halide vapor-phase epitaxy (THVPE) growth on polar, semipolar, and nonpolar bulk GaN substrates was demonstrated using GaCl3 as the precursor. The influence of the surface orientation of the substrate on GaN growth by THVPE was compared with that observed for GaN grown by hydride vapor-phase epitaxy. The dependence of the GaN growth on the surface orientation of the substrate was confirmed; GaN could be grown on , , , , and but not on , , , or . This behavior was explained to be due to the changes in adsorption energy, the magnitudes of which were estimated by theoretical calculations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
