Abstract
Resistive random-access memory (ReRAM) devices based on halide perovskites have recently emerged as a new class of data storage devices, where the switching materials used in these devices have attracted extensive attention in recent years. Thus far, three-dimensional (3D) halide perovskites have been the most investigated materials for resistive switching memory devices. However, 3D-based memory devices display ON/OFF ratios comparable to those of oxide or chalcogenide ReRAM devices. In addition, perovskite materials are susceptible to exposure to air. Herein, we compare the resistive switching characteristics of ReRAM devices based on a quasi-two-dimensional (2D) halide perovskite, (PEA)2Cs3Pb4I13, to those based on 3D CsPbI3. Astonishingly, the ON/OFF ratio of the (PEA)2Cs3Pb4I13-based memory devices (109) is three orders of magnitude higher than that of the CsPbI3 device, which is attributed to a decrease in the high-resistance state (HRS) current of the former. This device also retained a high ON/OFF current ratio for 2 weeks under ambient conditions, whereas the CsPbI3 device degraded rapidly and showed unreliable memory properties after 5 days. These results strongly suggest that quasi-2D halide perovskites have potential in resistive switching memory based on their desirable ON/OFF ratio and long-term stability.
Highlights
Photovoltaic devices are recognized as prospective energy sources[1,2,3,4,5,6,7,8]
For the low-temperature allsolution process, CsPbI3 and (PEA)2Cs3Pb4I13 films were successfully synthesized by the spin-coating method and by the thermal evaporation method using a dot-patterned shadow mask
Compared with CsPbI3, in a 3D halide perovskite, the two organic performance of the (PEA) cation layers that are stacked between the inorganic layers can increase the bandgap
Summary
Photovoltaic devices are recognized as prospective energy sources[1,2,3,4,5,6,7,8]. As light absorbers, halide perovskites have had a significant impact on solar cell research owing to their remarkable photovoltaic properties, such as their long charge diffusion length and low exciton binding energies[9,10,11,12,13,14,15,16]. The PEAI addition to form (PEA)2Cs3Pb4I13, a quasi-2D halide perovskite, dramatically improved the film uniformity[43,44]. Given that the ON/OFF resistive switching operation is explained by the SET and RESET processes for these halide perovskite memory devices, the SET process, which refers to the switching from a HRS (OFF state) to a lowresistance state (LRS; ON state) at a certain positive voltage, showed an abrupt increase.
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
