Abstract
Ag/SiO2/Pt-based resistive random access memory (RRAM) devices were fabricated and studied. A multilevel resistive switching (RS) characteristic was observed in the Ag/SiO2/Pt-based RRAM devices. Four different resistive states were obtained under both the direct current (DC) sweep mode and the pulse voltage mode. Good endurance and retention characteristics of the Ag/SiO2/Pt RRAM device with multilevel resistance states were demonstrated. The mechanism of multilevel RS was discussed and a multiple-conductive-filament model was used to explain the multilevel RS phenomenon in the Ag/SiO2/Pt-based RRAM devices.
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