Abstract
We have investigated the quasi-static capacitance–voltage (QSCV) characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs), focusing on how the integration time for the capacitance measurement affects the QSCV curves. We have found that the response time of the carriers in the OFF state of the TFTs can be estimated from the QSCV results. QSCV measurements with external illumination enable us to estimate the surface depletion capacitance of TFTs. We have also found that the QSCV characteristics vary with the channel length of TFTs, indicating that the channel length dependence must be taken into account when making a model of TFT capacitance in the OFF state.
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