Abstract
We present a modular 0.25 μm ASIC-compatible, double-poly self-aligned BiCMOS technology comprising either an implanted-base 45 GHz bipolar transistor or a 80 GHz-HBT with selective SiGe-epitaxy. All passive devices for RF-design are integrated, including a 7 fF/μm2 stacked MIS-/MIM-capacitor.
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