Abstract
A novel fabrication method for uni-travelling carrier (UTC) type photodiodes using quantum well (QW) intermixing and MOCVD regrowth is presented. This scheme will enable the monolithic integration of the photodiodes with high gain laser diodes, high efficiency electroabsorption modulators, and high saturation power semiconductor optical amplifiers. The photodiodes fabricated on intermixed quantum wells presented exhibit excellent photocurrent handling capabilities, minimal response roll-off over the 20 GHz of the testing capability, and open 40 Gbit/s eye diagrams.
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