High-Power Indium Phosphide Photonic Integrated Circuits

Abstract

Indium phosphide (InP) is the most developed platform for photonic integrated circuits (PICs). Of interest is the advancement of this platform for applications that demand high performance, especially high output power, including free space communications and microwave photonics. In this paper, we summarize development of InP-based PIC transmitters. Two transmitter types were fabricated: one based on an offset quantum wells (OQW) platform and the other on a quantum well intermixing (QWI) platform. The OQW-based transmitter consists of a widely tunable laser, a high-speed semiconductor optical amplifier (SOA), a Mach–Zehnder modulator, and an output SOA. This transmitter demonstrates a 44-nm tuning range, >45 dB side mode suppression ratio, 14.5 dBm off -chip power, and a data rate of 7 Gbps. The second transmitter, based on QWI, utilizes an alternate epitaxial structure to achieve a lower confinement factor for higher SOA output saturation power. This QWI transmitter consists of a distributed Bragg reflector laser, a high-speed SOA, an electroabsorption modulator, and an output SOA. The measured off -chip power is 19.5 dBm, and a data rate of 20 Gbps is demonstrated. Based on the improved performance with the new epitaxial structure, a novel platform for high-power PIC transmitters integrated with low confinement and high-power SOAs is described.