Abstract
A continuous compact model for the drain current, including short-channel effects and carrier quantization in Double-Gate MOSFET is developed. The model is particularly well-adapted to ultra-scaled devices, with short channel lengths and ultra-thin silicon films. An extensive comparison step with 2D quantum numerical results fully validates the model. The model is also shown to reproduce with an excellent accuracy experimental drain current in Double-Gate devices. Finally, the drain current model has been supplemented by a node charge model and the resulting DG model has been successfully implemented in Eldo IC analog simulator, demonstrating the application of the model to circuit simulation.
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