Abstract
A compact model for the threshold voltage in Double-Gate (DG) MOSFET is developed. The model takes into account short-channel effects, carrier quantization and temperature dependence of the threshold voltage. We assume a parabolic variation of the potential with the vertical position in the silicon film at threshold. An analytical expression for the surface potential dependence as a function of bias and position in the silicon film is also developed and used for the inversion charge calculation. The model has been fully validated by 2D quantum numerical simulation and is used to predict the threshold voltage roll-off in DG MOSFET with very short channel lengths and thin films. The comparison with measured threshold voltages shows that the model reproduces with an excellent accuracy the experimental data.
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