Quantum Mechanical Potential Modeling of FinFET

Abstract

This chapter focus on a full Two-Dimensional (2D) Quantum Mechanical (QM) analytical modeling in order to evaluate the 2D potential profile within the active area of FinFET structure. Various potential profiles such as surface, back to front gate, and source to drain potential have been presented in order to appreciate the usefulness of the device for circuit simulation purposes. As we move from source end of the gate to the drain end of the gate, there is substantial increase in the potential at any point in the channel. This is attributed to the increased value of longitudinal electric field at the drain end on application of a drain to source voltage. Further, in this chapter, the detailed study of threshold voltage and its variation with the process parameters is presented. A threshold voltage roll-off with fin thickness is observed for both theoretical and experimental results. The fin thickness is varied from 10 to 60 nm. From the analysis of S/D resistance, it is observed that for a fixed fin width, as the channel length increases, there is an enhancement in the parasitic S/D resistance. This can be inferred from the fact as the channel length decreases, quantum confinement along the S/D direction becomes more extensive. For our proposed devices a close match is obtained with the results through analytical model and reported experimental results, thereby validating our proposed QM analytical model for DG FinFET device.KeywordsThreshold VoltageGate VoltageChannel LengthLongitudinal Electric FieldDouble GateThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.