Abstract
We develop a theory of laser beam generation of shift currentsin non-centrosymmetric semiconductors. The currents originate whenthe excited electrons transfer between different bands or scatterinside these bands, and asymmetrically shift their centres of massin elementary cells. Quantum kinetic equations for hot-carrierdistributions and expressions for the induced currents are derivedusing non-equilibrium Green functions. In applications, we simplifythe approach to the Boltzmann limit and use it to modellaser-excited GaAs in the presence of longitudinal optical phononscattering. The shift currents are calculated in a steady-stateregime.
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