Abstract
We study the breakdown of the integer quantum Hall effect in a series of n-type GaAs/AlGaAs heterostructures in which the current flows through a short and narrow constriction. The critical mean current density is strongly dependent on the constriction width and is ∼10 A m −1 for the narrowest (1 μm) constriction, in qualitative agreement with earlier work by Bliek et al. We compare our data with other breakdown measurements and with the bootstrap-electron-heating and inter-Landau-level-scattering models.
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