Abstract
The quantum effects in InSb conductivity have been studied near the metal-insulator transition (MIT) of the percolation type caused by compensation. In highly compensated semiconductors parameters deviate from that predicted by the week localization and by the electron-electron interaction in disordered materials. The agreement can be achieved assuming that only the volume of percolation cluster is available for conducting electrons. Surprising negative magnetoresistance with two minima have been observed. The analysis of the phenomenon was performed on the base of the quantum correction theory and the model taking into account the Fermi energy increase due to Zeeman effect.
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